| Mfr. #: | STI57N65M5 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 650V 42A I2PAK-3 |
| ライフサイクル: | メーカー新製品 |
| データシート: | STI57N65M5 データシート |
Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style I2PAK-3 Si is the technology used. Power-off control: 250 W The ID of continuous drain current is 26.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 63 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STI57N65M5 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed MDmesh M5
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.050717 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is I2PAK-3.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 250 W.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 26.5 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 63 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.