| Mfr. #: | STL19N60DM2 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | N-CHANNEL 600 V, 0.28 OHM TYP., |
| ライフサイクル: | メーカー新製品 |
| データシート: | STL19N60DM2 データシート |
SMD/SMT Mounting-Style DFN-8 Si is the technology used. Number of channels: 1 Channel Configuration 1 N-Channel Transistor type: 1 N-Channel Power-off control: 90 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a - of 16 ns. This product has a - of 16 ns. This product's 25 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 320 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of - This product has a -. Qg-Gate-Charge is 21 nC. This product features a - of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance. The -.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STL19N60DM2 Specifications
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is DFN-8.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: What is the Configuration of the product?
Q: The Configuration of the product is 1 N-Channel.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 90 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is -.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is -.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 25 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 11 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 320 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is -.
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is -.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 21 nC.
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed -
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement
A: Is the cutoff frequency of the product Development-Kit?
Q: Yes, the product's Development-Kit is indeed -