STL23NM60ND

Mfr. #: STL23NM60ND
メーカー: STMicroelectronics
説明: MOSFET N-CH 600V 19.5A POWERFLAT
ライフサイクル: メーカー新製品
データシート: STL23NM60ND データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL23NM60ND Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 3 W This product has a 40 ns of 16 ns. This product has a 45 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 19.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 150 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 70 nC.

STL23NM60ND Image

STL23NM60ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL23NM60ND Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerFlat-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 3 W
  • Fall-Time 40 ns
  • Rise-Time 45 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 19.5 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 150 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 70 nC

STL23NM60ND

STL23NM60ND Specifications

STL23NM60ND FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel MDmesh.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed PowerFlat-8

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 3 W

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 40 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 45 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 19.5 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 150 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 70 nC

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