STL26NM60N

STL26NM60N Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 3 W This product has a 50 ns of 16 ns. This product has a 25 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 19 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 160 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 60 nC.

STL26NM60N Image

STL26NM60N Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel MDmesh
• Packaging Reel
• Mounting-Style SMD/SMT
• Package-Case PowerFlat-8
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 3 W
• Fall-Time 50 ns
• Rise-Time 25 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 19 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 160 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 60 nC

STL26NM60N FAQ

• A: What is the Series of the product?

  Q: The Series of the product is N-channel MDmesh.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Reel.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is PowerFlat-8.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 3 W

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 50 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 25 ns

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 19 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 160 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 60 nC