STL36N55M5

Mfr. #: STL36N55M5
メーカー: STMicroelectronics
説明: MOSFET N-CH 550V 22.5A 4PWRFLAT
ライフサイクル: メーカー新製品
データシート: STL36N55M5 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL36N55M5 Overview

Product belongs to the MDmesh M5 series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 150 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 13 ns of 16 ns. This product has a 13 ns of 16 ns. The ID of continuous drain current is 22.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 550 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 90 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 62 nC.

STL36N55M5 Image

STL36N55M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL36N55M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerFlat-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 150 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 13 ns
  • Rise-Time 13 ns
  • Id-Continuous-Drain-Current 22.5 A
  • Vds-Drain-Source-Breakdown-Voltage 550 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 90 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 62 nC

STL36N55M5

STL36N55M5 Specifications

STL36N55M5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh M5.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is PowerFlat-8.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 150 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 13 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 13 ns.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 22.5 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 550 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 90 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 62 nC.

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