STL70N10F3

Mfr. #: STL70N10F3
メーカー: STMicroelectronics
説明: IGBT Transistors MOSFET N-Ch 100V 0.0065 Ohm 16A STripFET III MOS
ライフサイクル: メーカー新製品
データシート: STL70N10F3 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL70N10F3 Overview

Product belongs to the STL70N10F3 series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Power-off control: 136 W This product has a 5.7 ns of 16 ns. This product has a 11 ns of 16 ns. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 8.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 43 ns This product has a 17 ns. Qg-Gate-Charge is 56 nC. This product operates in Enhancement channel mode for optimal performance.

STL70N10F3 Image

STL70N10F3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL70N10F3 Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series STL70N10F3
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerFlat-8
  • Technology Si
  • Pd-Power-Dissipation 136 W
  • Fall-Time 5.7 ns
  • Rise-Time 11 ns
  • Id-Continuous-Drain-Current 16 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 8.4 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 43 ns
  • Typical-Turn-On-Delay-Time 17 ns
  • Qg-Gate-Charge 56 nC
  • Channel-Mode Enhancement

STL70N10F3

STL70N10F3 Specifications

STL70N10F3 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STL70N10F3.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed PowerFlat-8

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 136 W

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 5.7 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 11 ns.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 16 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8.4 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 43 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 17 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 56 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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