STL70N4LLF5

Mfr. #: STL70N4LLF5
メーカー: STMicroelectronics
説明: MOSFET N-CH 40V 18A PWRFLAT 5X6
ライフサイクル: メーカー新製品
データシート: STL70N4LLF5 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL70N4LLF5 Overview

Product belongs to the STripFET V series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style 8-PowerVDFN Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Surface Mount mounting type Supplier device package: PowerFlat (6x5) This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 40V This product has an 1800pF @ 25V value of 300pF @ 25V. This product's Standard. 70A (Tc) continuous drain-ID current at 25°C; This product has an 6.5 mOhm @ 9A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 4 W 60 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's +/- 22 V. The ID of continuous drain current is 18 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 40 V. This product has a 1 V Vgs-th gate-source threshold voltage for efficient power management. The 6.1 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 13 nC.

STL70N4LLF5 Image

STL70N4LLF5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL70N4LLF5 Specifications
  • Manufacturer VB
  • Product Category FETs - Single
  • Series STripFET V
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case 8-PowerVDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 175°C (TJ)
  • Mounting-Type Surface Mount
  • Supplier-Device-Package PowerFlat (6x5)
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 4W
  • Drain-to-Source-Voltage-Vdss 40V
  • Input-Capacitance-Ciss-Vds 1800pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 70A (Tc)
  • Rds-On-Max-Id-Vgs 6.5 mOhm @ 9A, 10V
  • Vgs-th-Max-Id 1V @ 250μA
  • Gate-Charge-Qg-Vgs 13nC @ 4.5V
  • Pd-Power-Dissipation 4 W 60 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage +/- 22 V
  • Id-Continuous-Drain-Current 18 A
  • Vds-Drain-Source-Breakdown-Voltage 40 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1 V
  • Rds-On-Drain-Source-Resistance 6.1 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 13 nC

STL70N4LLF5

STL70N4LLF5 Specifications

STL70N4LLF5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STripFET V.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is 8-PowerVDFN.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 175°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed PowerFlat (6x5)

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 40V

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 1800pF @ 25V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 70A (Tc).

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 6.5 mOhm @ 9A, 10V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 4 W 60 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is +/- 22 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 18 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 40 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 6.1 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 13 nC

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