| Mfr. #: | STL7DN6LF3 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | IGBT Transistors MOSFET Dual N-Ch 60V 35mOhm 6.5A STripFET III |
| ライフサイクル: | メーカー新製品 |
| データシート: | STL7DN6LF3 データシート |
Product belongs to the STripFET III series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style 8-PowerVDFN Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: PowerFlat (5x6) Configuration Dual This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 60V This product has an 432pF @ 25V value of 300pF @ 25V. This product's Logic Level Gate. 20A continuous drain-ID current at 25°C; This product has an 43 mOhm @ 3A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 52 W The ID of continuous drain current is 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. The 43 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STL7DN6LF3 Specifications
A: At what frequency does the Series?
Q: The product Series is STripFET III.
A: What is the Packaging of the product?
Q: The Packaging of the product is Digi-ReelR Alternate Packaging.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is 8-PowerVDFN.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is -55°C ~ 175°C (TJ).
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 2 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed PowerFlat (5x6)
A: At what frequency does the Configuration?
Q: The product Configuration is Dual.
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed 2 N-Channel (Dual)
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 2 N-Channel.
A: At what frequency does the Drain-to-Source-Voltage-Vdss?
Q: The product Drain-to-Source-Voltage-Vdss is 60V.
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 432pF @ 25V.
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Logic Level Gate
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 20A.
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 43 mOhm @ 3A, 10V
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 52 W.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 20 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 60 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 43 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.