STN1HNK60

Mfr. #: STN1HNK60
メーカー: STMicroelectronics
説明: MOSFET N-CH 600V 400MA SOT223
ライフサイクル: メーカー新製品
データシート: STN1HNK60 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STN1HNK60 Overview

Product belongs to the SuperMESH series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.008826 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: SOT-223 Configuration Single Dual Drain This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 156pF @ 25V value of 300pF @ 25V. This product's Standard. 400mA (Tc) continuous drain-ID current at 25°C; This product has an 8.5 Ohm @ 500mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 3.3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 25 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 400 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 8.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 19 ns This product has a 6.5 ns. Qg-Gate-Charge is 7 nC. This product operates in Enhancement channel mode for optimal performance.

STN1HNK60 Image

STN1HNK60

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STN1HNK60 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.008826 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package SOT-223
  • Configuration Single Dual Drain
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 3.3W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 600V
  • Input-Capacitance-Ciss-Vds 156pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 400mA (Tc)
  • Rds-On-Max-Id-Vgs 8.5 Ohm @ 500mA, 10V
  • Vgs-th-Max-Id 3.7V @ 250μA
  • Gate-Charge-Qg-Vgs 10nC @ 10V
  • Pd-Power-Dissipation 3.3 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 25 ns
  • Rise-Time 5 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 400 mA
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 8.5 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 19 ns
  • Typical-Turn-On-Delay-Time 6.5 ns
  • Qg-Gate-Charge 7 nC
  • Channel-Mode Enhancement

STN1HNK60

STN1HNK60 Specifications

STN1HNK60 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is SuperMESH.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.008826 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-261-4, TO-261AA

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed SOT-223

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single Dual Drain

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 600V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 156pF @ 25V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 400mA (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 8.5 Ohm @ 500mA, 10V

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 3.3 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 25 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 5 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 400 mA.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8.5 Ohms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 19 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 6.5 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 7 nC

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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