STN1NK60Z

Mfr. #: STN1NK60Z
メーカー: STMicroelectronics
説明: MOSFET N-CH 600V 300MA SOT223
ライフサイクル: メーカー新製品
データシート: STN1NK60Z データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STN1NK60Z Overview

Product belongs to the SuperMESH series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.004395 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: SOT-223 Configuration Single Dual Drain This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 94pF @ 25V value of 300pF @ 25V. This product's Standard. 300mA (Tc) continuous drain-ID current at 25°C; This product has an 15 Ohm @ 400mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 3.3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 18 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 300 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 15 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 5.5 ns. Qg-Gate-Charge is 4.9 nC. This product features a 0.5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STN1NK60Z Image

STN1NK60Z

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STN1NK60Z Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.004395 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package SOT-223
  • Configuration Single Dual Drain
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 3.3W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 600V
  • Input-Capacitance-Ciss-Vds 94pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 300mA (Tc)
  • Rds-On-Max-Id-Vgs 15 Ohm @ 400mA, 10V
  • Vgs-th-Max-Id 4.5V @ 50μA
  • Gate-Charge-Qg-Vgs 6.9nC @ 10V
  • Pd-Power-Dissipation 3.3 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 18 ns
  • Rise-Time 5 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 300 mA
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 15 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 13 ns
  • Typical-Turn-On-Delay-Time 5.5 ns
  • Qg-Gate-Charge 4.9 nC
  • Forward-Transconductance-Min 0.5 S
  • Channel-Mode Enhancement

STN1NK60Z

STN1NK60Z Specifications

STN1NK60Z FAQ
  • A: At what frequency does the Series?

    Q: The product Series is SuperMESH.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.004395 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-261-4, TO-261AA.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-223.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single Dual Drain.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 600V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 94pF @ 25V

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 300mA (Tc)

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 15 Ohm @ 400mA, 10V

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 3.3 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 18 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 5 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 30 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 300 mA

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 15 Ohms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 13 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 5.5 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 4.9 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 0.5 S

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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1
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$0.17
10
$0.16
$1.64
100
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$15.53
500
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$73.30
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