STN851

Mfr. #: STN851
メーカー: STMicroelectronics
説明: Bipolar Transistors - BJT NPN Lo-Volt Fast Sw
ライフサイクル: メーカー新製品
データシート: STN851 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STN851 Overview

Product belongs to the 500V Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.006632 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Surface Mount mounting type Supplier device package: SOT-223 Configuration Single Transistor type: NPN Maximum current collector Ic is 5A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 150 @ 2A, 1V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 200mA, 5A Power-off control: 1.6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 320 mV The 150 V voltage rating is 40 V. 7 V rating of 5 V Max DC collector current: 5 A Gain-Bandwidth-Product: 130 MHz Minimum hfe for DC collector-base gain is 150. 350 of 605.

STN851 Image

STN851

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STN851 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.006632 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-261-4, TO-261AA
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-223
  • Configuration Single
  • Power-Max 1.6W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 5A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 150 @ 2A, 1V
  • Vce-Saturation-Max-Ib-Ic 500mV @ 200mA, 5A
  • Current-Collector-Cutoff-Max 50nA (ICBO)
  • Frequency-Transition 130MHz
  • Pd-Power-Dissipation 1.6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 320 mV
  • Collector-Base-Voltage-VCBO 150 V
  • Emitter-Base-Voltage-VEBO 7 V
  • Maximum-DC-Collector-Current 5 A
  • Gain-Bandwidth-Product-fT 130 MHz
  • DC-Collector-Base-Gain-hfe-Min 150
  • DC-Current-Gain-hFE-Max 350

STN851

STN851 Specifications

STN851 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 500V Transistors.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.006632 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-261-4, TO-261AA.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed SOT-223

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 5A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 60V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 150 @ 2A, 1V

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 500mV @ 200mA, 5A.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 1.6 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 65 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 60 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 320 mV

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 150 V.

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 7 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 5 A

  • A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?

    Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 130 MHz

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 150.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?

    Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 350

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1
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$0.23
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