STP110N55F6

STP110N55F6 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Power-off control: 150 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C The ID of continuous drain current is 110 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 55 V. The 5.2 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 120 nC.

STP110N55F6 Image

STP110N55F6 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series N-channel STripFET
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Pd-Power-Dissipation 150 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Id-Continuous-Drain-Current 110 A
• Vds-Drain-Source-Breakdown-Voltage 55 V
• Rds-On-Drain-Source-Resistance 5.2 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 120 nC

STP110N55F6 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed N-channel STripFET

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.011640 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-220-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 150 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 175 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 110 A

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 55 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 5.2 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 120 nC.