STP120NF10

STP120NF10 Overview

Product belongs to the STripFET II series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 100V This product has an 5200pF @ 25V value of 300pF @ 25V. This product's Standard. 110A (Tc) continuous drain-ID current at 25°C; This product has an 10.5 mOhm @ 60A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 312 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 68 ns of 16 ns. This product has a 90 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. The 10.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 132 ns This product has a 25 ns. This product features a 90 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP120NF10 Image

STP120NF10 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series STripFET II
• Packaging Tube
• Unit-Weight 0.050717 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 175°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220AB
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 312W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 100V
• Input-Capacitance-Ciss-Vds 5200pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 110A (Tc)
• Rds-On-Max-Id-Vgs 10.5 mOhm @ 60A, 10V
• Vgs-th-Max-Id 4V @ 250μA
• Gate-Charge-Qg-Vgs 233nC @ 10V
• Pd-Power-Dissipation 312 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 68 ns
• Rise-Time 90 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 120 A
• Vds-Drain-Source-Breakdown-Voltage 100 V
• Rds-On-Drain-Source-Resistance 10.5 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 132 ns
• Typical-Turn-On-Delay-Time 25 ns
• Forward-Transconductance-Min 90 S
• Channel-Mode Enhancement

STP120NF10 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is STripFET II.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.050717 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 175°C (TJ)

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 100V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 5200pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 110A (Tc).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 10.5 mOhm @ 60A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 312 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 175 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 68 ns

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 90 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 120 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 10.5 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 132 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 25 ns.

• A: At what frequency does the Forward-Transconductance-Min?

  Q: The product Forward-Transconductance-Min is 90 S.

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.