| Mfr. #: | STP16N65M2 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | IGBT Transistors MOSFET POWER MOSFET |
| ライフサイクル: | メーカー新製品 |
| データシート: | STP16N65M2 データシート |
Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 11.3 ns of 16 ns. This product has a 8.2 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 360 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 36 ns This product has a 11.3 ns. Qg-Gate-Charge is 19.5 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP16N65M2 Specifications
A: At what frequency does the Series?
Q: The product Series is MDmesh M2.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.011640 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 110 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 11.3 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 8.2 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 25 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 11 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 360 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 36 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 11.3 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 19.5 nC.
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.