| Mfr. #: | STP170N8F7 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 80V 120A TO-220AB |
| ライフサイクル: | メーカー新製品 |
| データシート: | STP170N8F7 データシート |
Product belongs to the N-channel STripFET series. Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Power-off control: 250 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 37 ns of 16 ns. This product has a 53 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.5 V to 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 3.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 79 ns This product has a 38 ns. Qg-Gate-Charge is 120 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP170N8F7 Specifications
A: What is the Series of the product?
Q: The Series of the product is N-channel STripFET.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.011640 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 250 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 175 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 37 ns.
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 53 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 120 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 80 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.5 V to 4.5 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 3.9 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 79 ns.
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 38 ns
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 120 nC
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.