STP19NM65N

STP19NM65N Overview

Product belongs to the MDmesh II series. Tube is the packaging method for this product Product Obsolete N-Channel FET Type MOSFET (Metal Oxide) is the technology used. Drain to Source Voltage (Vdss) is 650V Current - Continuous Drain (Id) at 25°C is given as 15.5A (Tc). This product's 10V is 1.8V, 4.5V. This product's 4V @ 250A for optimal performance. The maximum 55nC @ 10V gate charge of this product ensures efficient switching performance. Vgs (Max): ±25V This product has a maximum 1900pF @ 50V input capacitance at Vds for improved circuit performance. The maximum power dissipation is 150W (Tc). Rds On (Max) @ Id, Vgs is 270 mOhm @ 7.75A, 10V. Operating Temperature of 150°C (TJ) This product has a Through Hole. The supplier device package for this product is TO-220AB. Package type is TO-220-3

STP19NM65N Image

STP19NM65N Specifications

• Manufacturer ST
• Product Category IC Chips
• Series MDmesh II
• Packaging Tube
• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 650V
• Current - Continuous Drain (Id) @ 25°C 15.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs(th) (Max) @ Id 4V @ 250A
• Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
• Vgs (Max) ±25V
• Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 50V
• FET Feature -
• Power Dissipation (Max) 150W (Tc)
• Rds On (Max) @ Id, Vgs 270 mOhm @ 7.75A, 10V
• Operating Temperature 150°C (TJ)
• Mounting Type Through Hole
• Supplier Device Package TO-220AB
• Package / Case TO-220-3

STP19NM65N FAQ

• A: What is the Series of the product?

  Q: The Series of the product is MDmesh II.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: At what frequency does the Part Status?

  Q: The product Part Status is Obsolete.

• A: Is the cutoff frequency of the product FET Type?

  Q: Yes, the product's FET Type is indeed N-Channel

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed MOSFET (Metal Oxide)

• A: At what frequency does the Drain to Source Voltage (Vdss)?

  Q: The product Drain to Source Voltage (Vdss) is 650V.

• A: What is the Current - Continuous Drain (Id) @ 25°C of the product?

  Q: The Current - Continuous Drain (Id) @ 25°C of the product is 15.5A (Tc).

• A: At what frequency does the Drive Voltage (Max Rds On, Min Rds On)?

  Q: The product Drive Voltage (Max Rds On, Min Rds On) is 10V.

• A: At what frequency does the Vgs(th) (Max) @ Id?

  Q: The product Vgs(th) (Max) @ Id is 4V @ 250A.

• A: At what frequency does the Gate Charge (Qg) (Max) @ Vgs?

  Q: The product Gate Charge (Qg) (Max) @ Vgs is 55nC @ 10V.

• A: Is the cutoff frequency of the product Vgs (Max)?

  Q: Yes, the product's Vgs (Max) is indeed ±25V

• A: What is the Input Capacitance (Ciss) (Max) @ Vds of the product?

  Q: The Input Capacitance (Ciss) (Max) @ Vds of the product is 1900pF @ 50V.

• A: What is the Power Dissipation (Max) of the product?

  Q: The Power Dissipation (Max) of the product is 150W (Tc).

• A: Is the cutoff frequency of the product Rds On (Max) @ Id, Vgs?

  Q: Yes, the product's Rds On (Max) @ Id, Vgs is indeed 270 mOhm @ 7.75A, 10V

• A: Is the cutoff frequency of the product Operating Temperature?

  Q: Yes, the product's Operating Temperature is indeed 150°C (TJ)

• A: What is the Mounting Type of the product?

  Q: The Mounting Type of the product is Through Hole.

• A: What is the Supplier Device Package of the product?

  Q: The Supplier Device Package of the product is TO-220AB.

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is TO-220-3.