STP30N65M5

STP30N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 2880pF @ 100V value of 300pF @ 25V. This product's Standard. 22A (Tc) continuous drain-ID current at 25°C; This product has an 139 mOhm @ 11A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 140 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 8 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 22 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 125 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 50 ns Qg-Gate-Charge is 64 nC.

STP30N65M5 Image

STP30N65M5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series MDmesh V
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220AB
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 140W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 650V
• Input-Capacitance-Ciss-Vds 2880pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 22A (Tc)
• Rds-On-Max-Id-Vgs 139 mOhm @ 11A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 64nC @ 10V
• Pd-Power-Dissipation 140 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 10 ns
• Rise-Time 8 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 22 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Rds-On-Drain-Source-Resistance 125 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 50 ns
• Qg-Gate-Charge 64 nC

STP30N65M5 FAQ

• A: At what frequency does the Series?

  Q: The product Series is MDmesh V.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-220-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 650V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 2880pF @ 100V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 22A (Tc).

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 139 mOhm @ 11A, 10V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 140 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 10 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 8 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 22 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 125 mOhms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 50 ns

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 64 nC.