STP4N80K5

Mfr. #: STP4N80K5
メーカー: STMicroelectronics
説明: Darlington Transistors MOSFET N-CH 800V 2.1Ohm 3A Zener-protected
ライフサイクル: メーカー新製品
データシート: STP4N80K5 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP4N80K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style Trade name: SuperMesh. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 60 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 21 ns of 16 ns. This product has a 15 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 2.1 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 36 ns This product has a 16.5 ns. Qg-Gate-Charge is 10.5 nC. This product operates in Enhancement channel mode for optimal performance.

STP4N80K5 Image

STP4N80K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP4N80K5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh K5
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Tradename SuperMesh
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 60 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 21 ns
  • Rise-Time 15 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 3 A
  • Vds-Drain-Source-Breakdown-Voltage 800 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 2.1 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 36 ns
  • Typical-Turn-On-Delay-Time 16.5 ns
  • Qg-Gate-Charge 10.5 nC
  • Channel-Mode Enhancement

STP4N80K5

STP4N80K5 Specifications

STP4N80K5 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh K5

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is SuperMesh.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 60 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 21 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 15 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 3 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 800 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 2.1 Ohms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 36 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 16.5 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 10.5 nC.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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