STP8NK100Z

STP8NK100Z Overview

Product belongs to the SuperMESH series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1000V (1kV) This product has an 2180pF @ 25V value of 300pF @ 25V. This product's Standard. 6.5A (Tc) continuous drain-ID current at 25°C; This product has an 1.85 Ohm @ 3.15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 160 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 30 ns of 16 ns. This product has a 19 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1000 V. The 1.6 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 59 ns This product has a 28 ns. Qg-Gate-Charge is 73 nC. This product features a 7 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP8NK100Z Image

STP8NK100Z Specifications

• Manufacturer STMicroelectronics
• Product Category IC Chips
• Series SuperMESH
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220AB
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 160W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 1000V (1kV)
• Input-Capacitance-Ciss-Vds 2180pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 6.5A (Tc)
• Rds-On-Max-Id-Vgs 1.85 Ohm @ 3.15A, 10V
• Vgs-th-Max-Id 4.5V @ 100μA
• Gate-Charge-Qg-Vgs 102nC @ 10V
• Pd-Power-Dissipation 160 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 30 ns
• Rise-Time 19 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 6.5 A
• Vds-Drain-Source-Breakdown-Voltage 1000 V
• Rds-On-Drain-Source-Resistance 1.6 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 59 ns
• Typical-Turn-On-Delay-Time 28 ns
• Qg-Gate-Charge 73 nC
• Forward-Transconductance-Min 7 S
• Channel-Mode Enhancement

STP8NK100Z FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed SuperMESH

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.011640 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 1000V (1kV).

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 2180pF @ 25V

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 6.5A (Tc).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 1.85 Ohm @ 3.15A, 10V.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 160 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 30 ns

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 19 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 6.5 A

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 1000 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 1.6 Ohms

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 59 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 28 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 73 nC.

• A: At what frequency does the Forward-Transconductance-Min?

  Q: The product Forward-Transconductance-Min is 7 S.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.