| Mfr. #: | STS8C5H30L |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N/P-CH 30V 8A/5.4A 8SOIC |
| ライフサイクル: | メーカー新製品 |
| データシート: | STS8C5H30L データシート |
Product belongs to the STripFET III series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.002998 oz SMD/SMT Mounting-Style 8-SOIC (0.154", 3.90mm Width) Si is the technology used. Operational temperature range: 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-SO Configuration Dual Dual Drain This product uses an N and P-Channel FET-Type transistor. Transistor type: 1 N-Channel 1 P-Channel 30V This product has an 857pF @ 25V value of 300pF @ 25V. This product's Logic Level Gate. 8A, 5.4A continuous drain-ID current at 25°C; This product has an 22 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns 35 ns of 16 ns. This product has a 14.5 ns 35 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 22 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel P-Channel. 'Typical-Turn-Off-Delay-Time' of 23 ns 125 ns This product has a 12 ns 25 ns. Qg-Gate-Charge is 7 nC. This product features a 8.5 S 10 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STS8C5H30L Specifications
A: What is the Series of the product?
Q: The Series of the product is STripFET III.
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.002998 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is 8-SOIC (0.154", 3.90mm Width).
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed 150°C (TJ)
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 2 Channel.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 8-SO.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Dual Dual Drain
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed N and P-Channel
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel 1 P-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 857pF @ 25V
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Logic Level Gate.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 8A, 5.4A
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 22 mOhm @ 4A, 10V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 2 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 8 ns 35 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 14.5 ns 35 ns
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 16 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 8 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2.5 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 22 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel P-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 23 ns 125 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 12 ns 25 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 7 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 8.5 S 10 S.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement