| Mfr. #: | STU10NM60N |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 600V 10A IPAK |
| ライフサイクル: | メーカー新製品 |
| データシート: | STU10NM60N データシート |
Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style IPAK-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel The ID of continuous drain current is 8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 530 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STU10NM60N Specifications
A: What is the Series of the product?
Q: The Series of the product is N-channel MDmesh.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.139332 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is IPAK-3.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 8 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 530 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel