STU65N3LLH5

Mfr. #: STU65N3LLH5
メーカー: STMicroelectronics
説明: IGBT Transistors MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V
ライフサイクル: メーカー新製品
データシート: STU65N3LLH5 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STU65N3LLH5 Overview

Product belongs to the STU65N3LLH5 series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style IPAK-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 50 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 6 ns of 16 ns. This product has a 11.2 ns of 16 ns. The ID of continuous drain current is 65 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.8 V Vgs-th gate-source threshold voltage for efficient power management. The 9.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 32.4 ns This product has a 8.6 ns. Qg-Gate-Charge is 8 nC.

STU65N3LLH5 Image

STU65N3LLH5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STU65N3LLH5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series STU65N3LLH5
  • Packaging Tube
  • Unit-Weight 0.139332 oz
  • Mounting-Style Through Hole
  • Package-Case IPAK-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 50 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 6 ns
  • Rise-Time 11.2 ns
  • Id-Continuous-Drain-Current 65 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.8 V
  • Rds-On-Drain-Source-Resistance 9.7 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 32.4 ns
  • Typical-Turn-On-Delay-Time 8.6 ns
  • Qg-Gate-Charge 8 nC

STU65N3LLH5

STU65N3LLH5 Specifications

STU65N3LLH5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is STU65N3LLH5.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed IPAK-3

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 50 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 175 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 6 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 11.2 ns.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 65 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 30 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.8 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 9.7 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 32.4 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 8.6 ns

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 8 nC

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