| Mfr. #: | STU9N65M2 |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 650V 5A IPAK |
| ライフサイクル: | メーカー新製品 |
| データシート: | STU9N65M2 データシート |
Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style Trade name: MDmesh. IPAK-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 60 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 18 ns of 16 ns. This product has a 6.6 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 900 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 22.5 ns This product has a 7.5 ns. Qg-Gate-Charge is 10 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STU9N65M2 Specifications
A: At what frequency does the Series?
Q: The product Series is MDmesh M2.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.139332 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: What is the Tradename of the product?
Q: The Tradename of the product is MDmesh.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed IPAK-3
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 60 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 18 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 6.6 ns
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 25 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 5 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 900 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 22.5 ns.
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 7.5 ns
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 10 nC.