STW13N60M2

Mfr. #: STW13N60M2
メーカー: STMicroelectronics
説明: MOSFET N-CH 600V 11A TO-247
ライフサイクル: メーカー新製品
データシート: STW13N60M2 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW13N60M2 Overview

Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 9.5 ns of 16 ns. This product has a 10 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 380 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 41 ns This product has a 11 ns. Qg-Gate-Charge is 17 nC. This product operates in Enhancement channel mode for optimal performance.

STW13N60M2 Image

STW13N60M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW13N60M2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M2
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 110 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 9.5 ns
  • Rise-Time 10 ns
  • Vgs-Gate-Source-Voltage +/- 25 V
  • Id-Continuous-Drain-Current 11 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 380 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 41 ns
  • Typical-Turn-On-Delay-Time 11 ns
  • Qg-Gate-Charge 17 nC
  • Channel-Mode Enhancement

STW13N60M2

STW13N60M2 Specifications

STW13N60M2 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh M2.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-247-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 9.5 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 10 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is +/- 25 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 11 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 380 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 41 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 11 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 17 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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