STW13NK60Z

Mfr. #: STW13NK60Z
メーカー: STMicroelectronics
説明: MOSFET N-CH 600V 13A TO-247
ライフサイクル: メーカー新製品
データシート: STW13NK60Z データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW13NK60Z Overview

Product belongs to the SuperMESH series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 2030pF @ 25V value of 300pF @ 25V. This product's Standard. 13A (Tc) continuous drain-ID current at 25°C; This product has an 550 mOhm @ 4.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 150 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 12 ns of 16 ns. This product has a 14 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 13 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 550 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 61 ns This product has a 22 ns. Qg-Gate-Charge is 66 nC. This product features a 11 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STW13NK60Z Image

STW13NK60Z

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW13NK60Z Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-247-3
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 150W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 600V
  • Input-Capacitance-Ciss-Vds 2030pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 13A (Tc)
  • Rds-On-Max-Id-Vgs 550 mOhm @ 4.5A, 10V
  • Vgs-th-Max-Id 4.5V @ 100μA
  • Gate-Charge-Qg-Vgs 92nC @ 10V
  • Pd-Power-Dissipation 150 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 12 ns
  • Rise-Time 14 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 13 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 550 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 61 ns
  • Typical-Turn-On-Delay-Time 22 ns
  • Qg-Gate-Charge 66 nC
  • Forward-Transconductance-Min 11 S
  • Channel-Mode Enhancement

STW13NK60Z

STW13NK60Z Specifications

STW13NK60Z FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed SuperMESH

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-247-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-247-3.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 600V

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 2030pF @ 25V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 13A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 550 mOhm @ 4.5A, 10V

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 150 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 12 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 14 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 13 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 550 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 61 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 22 ns

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 66 nC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 11 S.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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小計金額
1
$1.15
$1.15
10
$1.09
$10.88
100
$1.03
$103.06
500
$0.97
$486.65
1000
$0.92
$916.10
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