STW18N65M5

STW18N65M5 Overview

Product belongs to the MDmesh M5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 110 W This product has a 9 ns of 16 ns. This product has a 7 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 9.4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 5 V Vgs-th gate-source threshold voltage for efficient power management. The 220 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 31 nC.

STW18N65M5 Image

STW18N65M5 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series MDmesh M5
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 110 W
• Fall-Time 9 ns
• Rise-Time 7 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 9.4 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Vgs-th-Gate-Source-Threshold-Voltage 5 V
• Rds-On-Drain-Source-Resistance 220 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 31 nC

STW18N65M5 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is MDmesh M5.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 1.340411 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-247-3

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 9 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 7 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 9.4 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 5 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 220 mOhms

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 31 nC