STW21N150K5

Mfr. #: STW21N150K5
メーカー: STMicroelectronics
説明: MOSFET N-CH 1500V 14A TO-247
ライフサイクル: メーカー新製品
データシート: STW21N150K5 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW21N150K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 1500V (1.5kV) This product has an 3145pF @ 100V value of 300pF @ 25V. This product's Standard. 14A (Tc) continuous drain-ID current at 25°C; This product has an 900 mOhm @ 7A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 446 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 26 ns of 16 ns. This product has a 14 ns of 16 ns. This product's +/- 30 V. The ID of continuous drain current is 14 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1.5 kV. This product has a 3 V to 5 V Vgs-th gate-source threshold voltage for efficient power management. The 900 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 134 ns This product has a 34 ns. Qg-Gate-Charge is 89 nC. This product operates in Enhancement channel mode for optimal performance.

STW21N150K5 Image

STW21N150K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW21N150K5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series MDmesh K5
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-247
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 446W
  • Drain-to-Source-Voltage-Vdss 1500V (1.5kV)
  • Input-Capacitance-Ciss-Vds 3145pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 14A (Tc)
  • Rds-On-Max-Id-Vgs 900 mOhm @ 7A, 10V
  • Vgs-th-Max-Id 5V @ 100μA
  • Gate-Charge-Qg-Vgs 89nC @ 10V
  • Pd-Power-Dissipation 446 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 26 ns
  • Rise-Time 14 ns
  • Vgs-Gate-Source-Voltage +/- 30 V
  • Id-Continuous-Drain-Current 14 A
  • Vds-Drain-Source-Breakdown-Voltage 1.5 kV
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V to 5 V
  • Rds-On-Drain-Source-Resistance 900 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 134 ns
  • Typical-Turn-On-Delay-Time 34 ns
  • Qg-Gate-Charge 89 nC
  • Channel-Mode Enhancement

STW21N150K5

STW21N150K5 Specifications

STW21N150K5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh K5.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 1.340411 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-247-3

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-247

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 1500V (1.5kV)

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 3145pF @ 100V

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 14A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 900 mOhm @ 7A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 446 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 26 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 14 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is +/- 30 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 14 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 1.5 kV.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V to 5 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 900 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 134 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 34 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 89 nC

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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