| Mfr. #: | STW27N60M2-EP |
|---|---|
| メーカー: | STMicroelectronics |
| 説明: | MOSFET N-CH 600V 20A TO-220 |
| ライフサイクル: | メーカー新製品 |
| データシート: | STW27N60M2-EP データシート |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-247-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 20 A; The Rds On - Drain-Source Resistance of the product is 163 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 2 V Gate-Source Threshold Voltage of Vgs th; 33 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 6.3 ns - 55 C minimum operating temperature The power dissipation is 170 W. 8.1 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 55.6 ns; The 13.4 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW27N60M2-EP Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-247-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 600 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 20 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 163 mOhms
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed +/- 25 V
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 2 V
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 33 nC
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed 1 N-Channel
A: At what frequency does the Fall Time?
Q: The product Fall Time is 6.3 ns.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 170 W
A: At what frequency does the Rise Time?
Q: The product Rise Time is 8.1 ns.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 55.6 ns
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 13.4 ns.