STW36NM60N

Mfr. #: STW36NM60N
メーカー: STMicroelectronics
説明: RF Bipolar Transistors MOSFET N-Ch 600V 0.092 Ohm 29A MDmesh II
ライフサイクル: メーカー新製品
データシート: STW36NM60N データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW36NM60N Overview

Product belongs to the STW36NM60N series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 210 W Maximum operating temperature of + 150 C The ID of continuous drain current is 29 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 105 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STW36NM60N Image

STW36NM60N

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW36NM60N Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series STW36NM60N
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 210 W
  • Maximum-Operating-Temperature + 150 C
  • Id-Continuous-Drain-Current 29 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 105 mOhms
  • Transistor-Polarity N-Channel

STW36NM60N

STW36NM60N Specifications

STW36NM60N FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STW36NM60N

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 1.340411 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-247-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 210 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 29 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 105 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

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