STW54NM65ND

Mfr. #: STW54NM65ND
メーカー: STMicroelectronics
説明: IGBT Transistors MOSFET N-Ch 650V 0.055 Ohm 49A FDmesh II
ライフサイクル: メーカー新製品
データシート: STW54NM65ND データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW54NM65ND Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 350 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 25 V. The ID of continuous drain current is 49 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 65 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 188 nC.

STW54NM65ND Image

STW54NM65ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW54NM65ND Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 350 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 49 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Rds-On-Drain-Source-Resistance 65 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 188 nC

STW54NM65ND

STW54NM65ND Specifications

STW54NM65ND FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel MDmesh.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-247-3

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 350 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 49 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 65 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 188 nC.

1680 In Stock
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単価
小計金額
1
$15.88
$15.88
10
$15.09
$150.85
100
$14.29
$1 429.11
500
$13.50
$6 748.60
1000
$12.70
$12 703.20
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