STW7NK90Z

STW7NK90Z Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 140 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20 ns of 16 ns. This product has a 45 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 5.8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 900 V. The 2 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 17 ns. Qg-Gate-Charge is 46.5 nC. This product operates in Enhancement channel mode for optimal performance.

STW7NK90Z Image

STW7NK90Z Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series N-channel MDmesh
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 140 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 20 ns
• Rise-Time 45 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 5.8 A
• Vds-Drain-Source-Breakdown-Voltage 900 V
• Rds-On-Drain-Source-Resistance 2 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 20 ns
• Typical-Turn-On-Delay-Time 17 ns
• Qg-Gate-Charge 46.5 nC
• Channel-Mode Enhancement

STW7NK90Z FAQ

• A: At what frequency does the Series?

  Q: The product Series is N-channel MDmesh.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 1.340411 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-247-3

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 140 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 20 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 45 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 5.8 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 900 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2 Ohms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 20 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 17 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 46.5 nC.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement