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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| K4H560838F-TCCC000 | Samsung Semiconductor | DRAM Chip DDR SDRAM 256M-Bit 32Mx8 2.6V 66-Pin TSOP-II Tray | 32 In Stock |
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| K4H560838H-ZCCC | Samsung Semiconductor | DRAM Chip DDR SDRAM 256M-Bit 32Mx8 2.6V 60-Pin FBGA Tray | 610 In Stock |
|
| K4H560838B-TCB0 | Samsung Semiconductor | 25 | ||
| K4H560838J-LCB3 | Samsung Electronics Co. Ltd | 1699 | ||
| K4H560838C-TCA2 | Samsung Electro-Mechanics | 32M X 8 DDR DRAM, 0.75 ns, 66 Pin Plastic SMT | 11 | |
| K4H560838D-TCB3 | Samsung Electro-Mechanics | SDRAM, DDR, 32Mx 8, 66 Pin, Plastic, TSSOP | 12 |
|
| K4H560838D-TCB3 | Samsung Electro-Mechanics | SDRAM, DDR, 32Mx 8, 66 Pin, Plastic, TSSOP | 141 |
|
| K4H560838E-GCB3 | Samsung Electro-Mechanics | 32M X 8 DDR DRAM, 0.7 ns, PBGA60 | 173 |
|
| K4H560838E-GCCC | Samsung Electro-Mechanics | 32M X 8 DDR DRAM, 0.65 ns, PBGA60 | 52 |
|
| K4H560838E-TCA2 | Samsung Electro-Mechanics | 32M X 8 DDR DRAM, 0.75 ns, PDSO66 | 312 |
|
| K4H560838E-TCB0 | Samsung Electro-Mechanics | 32M X 8 DDR DRAM, 0.75 ns, PDSO66 | 18 |
|
| K4H560838E-TCB3 | Samsung Electro-Mechanics | 32M X 8 DDR DRAM, 0.7 ns, PDSO66 | 37 | |
| K4H560838F-TCB3 | Samsung Semiconductor | SDRAM, DDR, 32M x 8, 66 Pin, Plastic, TSSOP | 191 |
|
| K4H560838F-TCB3 | Samsung Electro-Mechanics | SDRAM, DDR, 32M x 8, 66 Pin, Plastic, TSSOP | 5 |
|
| K4H560838F-TCB3 | Samsung Semiconductor | SDRAM, DDR, 32M x 8, 66 Pin, Plastic, TSSOP | 83 |
|
| K4H560838F-TCB3000 | Samsung Semiconductor | 4 |
| |
| K4H560838F-TCCC | Samsung Electro-Mechanics | 32M X 8 DDR DRAM, 0.65 ns, PDSO66 | 150 |
|
| K4H560838F-TCCD | Samsung Electro-Mechanics | 32M X 8 DDR DRAM, 0.65 ns, 66 Pin Plastic SMT | 6 | |
| K4H560838F-TCCD | Samsung Semiconductor | 32M X 8 DDR DRAM, 0.65 ns, 66 Pin Plastic SMT | 160 |
|
| K4H560838DTCB0 | Samsung Semiconductor | RoHS: Not Compliant | Europe - 184 | |
| K4H560838CTCB0 | Samsung Semiconductor | RoHS: Not Compliant | Europe - 40 | |
| K4H560838F-TCB3 | INSTOCK | 506 | ||
| K4H560838H-UCB3 | Samsung Semiconductor | INSTOCK | 73106 | |
| K4H560838H-UCB3 | Samsung Electronics Co. Ltd | RoHS (ship within 1day) | 59382 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: K4H510438D-UCB3 OMO.#: OMO-K4H510438D-UCB3-1190 |
IC,SDRAM,DDR,4X32MX4,CMOS,TSSOP,66PIN,PLASTIC |
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Mfr.#: K4H510838D-UCCC OMO.#: OMO-K4H510838D-UCCC-1190 |
ブランドニューオリジナル |
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Mfr.#: K4H511638C-UCC OMO.#: OMO-K4H511638C-UCC-1190 |
ブランドニューオリジナル |
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Mfr.#: K4H511638G-HIB3 OMO.#: OMO-K4H511638G-HIB3-1190 |
ブランドニューオリジナル |
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Mfr.#: K4H511638J-LCB300 OMO.#: OMO-K4H511638J-LCB300-1190 |
ブランドニューオリジナル |
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Mfr.#: K4H51163BG-HIB3 OMO.#: OMO-K4H51163BG-HIB3-1190 |
ブランドニューオリジナル |
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Mfr.#: K4H560838E-TCB3 OMO.#: OMO-K4H560838E-TCB3-1190 |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 |
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Mfr.#: K4H560838J-LCCC OMO.#: OMO-K4H560838J-LCCC-1190 |
ブランドニューオリジナル |
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Mfr.#: K4H561638H-ZCB3 OMO.#: OMO-K4H561638H-ZCB3-1190 |
ブランドニューオリジナル |
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Mfr.#: K4H561638HUCCC OMO.#: OMO-K4H561638HUCCC-1190 |
ブランドニューオリジナル |