IRF8915PBF

Mfr. #:: IRF8915PBF
メーカー:: Rochester Electronics, LLC
説明:: IGBT Transistors MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC
ライフサイクル:: メーカー新製品
データシート:: IRF8915PBF データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: インターナショナルレクティファイアー

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: チューブ

単位重量: 0.019048 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: SOIC-8

テクノロジー: Si

チャネル数: 2 Channel

構成: デュアルデュアルドレイン

トランジスタタイプ: 2 N-Channel

Pd-電力損失: 2 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 3.6 ns

立ち上がり時間: 12 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 8.9 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 20 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.7 V to 2.5 V

Rds-On-Drain-Source-Resistance: 27 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 7.1 ns

典型的なターンオン遅延時間: 6 ns

Qg-Gate-Charge: 4.9 nC

フォワード-相互コンダクタンス-最小: 12 S

チャネルモード: 強化

Tags: IRF8915, IRF891, IRF89, IRF8, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8915PBF 説明

***et: Transistor MOSFET Array Dual N-CH 20V 8.9A 8-Pin SOIC Tube

***ernational Rectifier: 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):18.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***ure Electronics: Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET

***ment14 APAC: N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8

***(Formerly Allied Electronics): IRF7401PBF N-channel MOSFET Transistor; 8.7 A; 20 V; 8-Pin SOIC

***ure Electronics: Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC

***nell: N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg

***roFlash: Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***ure Electronics: Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET

***ark: Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes

***et Japan: Transistor MOSFET Array Dual N-CH 20V 7.63A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R

***(Formerly Allied Electronics): Dual N-Channel Enhancement MOSFET SOIC8

***des Inc SCT: N-Channel Mosfet, 20V VDS, 12±V VGS

***peria: PSMN010-25YLC - N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology

***et: Transistor MOSFET N-Channel 25V 39A 4-Pin LFPAK

*** Electronics: MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET

***el Electronic: Interface - Drivers, Receivers, Transceivers 2 (1 Year) 8-SOIC (0.154, 3.90mm Width) Tape & Reel (TR) Transceiver Surface Mount 4.75V~5.25V 2/1 1Mbps CAN TRANSCEIVER

***peria: PSMN012-25YLC - N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology

***et: Trans MOSFET N-CH 25V 33A 5-Pin(4+Tab) LFPAK T/R

*** Electronics: MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET

Market price

モデル	メーカー	説明	ストック	価格
IRF8915TRPBF DISTI # IRF8915PBFCT-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 8.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7769In Stock	1000:$0.3740 500:$0.4675 100:$0.6311 10:$0.8180 1:$0.9300
IRF8915TRPBF DISTI # IRF8915PBFDKR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 8.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7769In Stock	1000:$0.3740 500:$0.4675 100:$0.6311 10:$0.8180 1:$0.9300
IRF8915TRPBF DISTI # IRF8915PBFTR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 8.9A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.3291
IRF8915PBF DISTI # 70018279	Infineon Technologies AG	IRF8915PBF Dual N-channel MOSFET Transistor,8.9 A,20 V,8-Pin SOIC RoHS: Compliant	0	3800:$1.0900 7600:$1.0680 19000:$1.0360 38000:$0.9920 95000:$0.9270
IRF8915PBF DISTI # 942-IRF8915PBF	Infineon Technologies AG	MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC RoHS: Compliant	2570	1:$1.0900 10:$0.4830 100:$0.3700 1000:$0.3490 2500:$0.3130 10000:$0.3010 25000:$0.2870
IRF8915PBF	International Rectifier	RoHS: Not Compliant	355	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600

画像	モデル	説明
	Mfr.#: IRF8910TRPBF OMO.#: OMO-IRF8910TRPBF	MOSFET MOSFT DUAL NCh 20V 10A
	Mfr.#: IRF8910TRPBF OMO.#: OMO-IRF8910TRPBF-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 20V 10A 8-SOIC
	Mfr.#: IRF8915TRPBF-CUT TAPE OMO.#: OMO-IRF8915TRPBF-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: IRF8915UTRPBF OMO.#: OMO-IRF8915UTRPBF-1190	ブランドニューオリジナル
	Mfr.#: IRF8910 OMO.#: OMO-IRF8910-1190	INSTOCK
	Mfr.#: IRF8910PBF-1 OMO.#: OMO-IRF8910PBF-1-1190	ブランドニューオリジナル
	Mfr.#: IRF8910TR OMO.#: OMO-IRF8910TR-1190	ブランドニューオリジナル
	Mfr.#: IRF8910TRPBF. OMO.#: OMO-IRF8910TRPBF--1190	TRENCH_MOSFETS , ROHS COMPLIANT: YES
	Mfr.#: IRF8915PBFCT-ND OMO.#: OMO-IRF8915PBFCT-ND-1190	ブランドニューオリジナル
	Mfr.#: IRF8915TRPBF OMO.#: OMO-IRF8915TRPBF-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 20V 8.9A 8-SOIC

IRF8915PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes