AS4C64M16D1A-6BIN

AS4C64M16D1A-6BIN
Mfr. #:
AS4C64M16D1A-6BIN
メーカー:
Alliance Memory
説明:
DRAM 1G 64Mx16 166MHz 2.5V DDR1 IT
ライフサイクル:
メーカー新製品
データシート:
AS4C64M16D1A-6BIN データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
AS4C64M16D1A-6BIN 詳しくは
製品属性
属性値
メーカー:
アライアンスメモリー
製品カテゴリ:
DRAM
JBoss:
Y
タイプ:
SDRAM-DDR
データバス幅:
16 bit
組織:
64 M x 16
パッケージ/ケース:
FBGA-60
メモリー容量:
1 Gbit
最大クロック周波数:
166 MHz
アクセス時間:
0.7 ns
供給電圧-最大:
2.7 V
供給電圧-最小:
2.3 V
供給電流-最大:
180 mA
最低動作温度:
- 40 C
最高作動温度:
+ 85 C
シリーズ:
AS4C64M16D1A
包装:
トレイ
ブランド:
アライアンスメモリー
取り付けスタイル:
SMD / SMT
感湿性:
はい
製品タイプ:
DRAM
ファクトリーパックの数量:
240
サブカテゴリ:
メモリとデータストレージ
Tags
AS4C64M16D1A, AS4C64M16D1, AS4C64M16D, AS4C64M1, AS4C6, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***o
    A***o
    UA

    Got as much as i ordered, until i checked. Packing is simple package. Delivery 22 days.Seller recommend.

    2019-04-12
    T***k
    T***k
    RU

    Although not very fast, but still satisfied

    2019-07-03
    L***i
    L***i
    IT

    Great product

    2019-04-25
    E**n
    E**n
    US

    minuteria ben suddivisa

    2019-07-09
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
画像 モデル 説明
AS4C64M16MD2-25BCN

Mfr.#: AS4C64M16MD2-25BCN

OMO.#: OMO-AS4C64M16MD2-25BCN

DRAM 1G 1.2V/1.8V 400MHz 64Mx16 Mobile DDR2
AS4C64M16D3A-12BCN

Mfr.#: AS4C64M16D3A-12BCN

OMO.#: OMO-AS4C64M16D3A-12BCN

DRAM 1G 1.5V 800MHz 64M x 16 DDR3
AS4C64M16MD1-6BCN

Mfr.#: AS4C64M16MD1-6BCN

OMO.#: OMO-AS4C64M16MD1-6BCN-ALLIANCE-MEMORY

DRAM 1G 1.8V 166Mhz 64M x 16 Mobile DDR
AS4C64M16D3-12BCN

Mfr.#: AS4C64M16D3-12BCN

OMO.#: OMO-AS4C64M16D3-12BCN-ALLIANCE-MEMORY

DRAM 1G, 1.5V, 1600Mhz 64M x 16 DDR3
AS4C64M16D2A-25BCN

Mfr.#: AS4C64M16D2A-25BCN

OMO.#: OMO-AS4C64M16D2A-25BCN-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 84FBGA
AS4C64M16D2A-25BINTR

Mfr.#: AS4C64M16D2A-25BINTR

OMO.#: OMO-AS4C64M16D2A-25BINTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 84FBGA
AS4C64M16D3B-12BCNTR

Mfr.#: AS4C64M16D3B-12BCNTR

OMO.#: OMO-AS4C64M16D3B-12BCNTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA
AS4C64M16D3A-12BCNTR

Mfr.#: AS4C64M16D3A-12BCNTR

OMO.#: OMO-AS4C64M16D3A-12BCNTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA
AS4C64M16D3LA-12BANTR

Mfr.#: AS4C64M16D3LA-12BANTR

OMO.#: OMO-AS4C64M16D3LA-12BANTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA Automotive, AEC-Q100
AS4C64M16MD1A-5BINTR

Mfr.#: AS4C64M16MD1A-5BINTR

OMO.#: OMO-AS4C64M16MD1A-5BINTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 60FBGA
可用性
ストック:
240
注文中:
2223
数量を入力してください:
AS4C64M16D1A-6BINの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$24.19
$24.19
5
$23.05
$115.25
10
$22.53
$225.30
25
$22.28
$557.00
50
$21.73
$1 086.50
100
$19.08
$1 908.00
250
$17.94
$4 485.00
500
$17.20
$8 600.00
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