IPB60R125CP

IPB60R125CP
Mfr. #:
IPB60R125CP
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
ライフサイクル:
メーカー新製品
データシート:
IPB60R125CP データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPB60R125CP 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-263-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
25 A
Rds On-ドレイン-ソース抵抗:
110 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.5 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
70 nc
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
208 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
リール
高さ:
4.4 mm
長さ:
10 mm
シリーズ:
CoolMOS CE
トランジスタタイプ:
1 N-Channel
タイプ:
600 V CoolMOS C6 Power Transistor
幅:
9.25 mm
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
5 ns
製品タイプ:
MOSFET
立ち上がり時間:
5 ns
ファクトリーパックの数量:
1000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
50 ns
典型的なターンオン遅延時間:
15 ns
パーツ番号エイリアス:
IPB60R125CPATMA1 IPB6R125CPXT SP000297368
単位重量:
0.139332 oz
Tags
IPB60R125CP, IPB60R125, IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
モデル メーカー 説明 ストック 価格
IPB60R125CPATMA1
DISTI # IPB60R125CPATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 600V 25A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
76In Stock
  • 500:$4.1357
  • 100:$5.1073
  • 10:$6.2280
  • 1:$6.9800
IPB60R125CPATMA1
DISTI # IPB60R125CPATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 600V 25A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
76In Stock
  • 500:$4.1357
  • 100:$5.1073
  • 10:$6.2280
  • 1:$6.9800
IPB60R125CPATMA1
DISTI # IPB60R125CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 25A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$3.3863
IPB60R125CP
DISTI # IPB60R125CP
Infineon Technologies AGTrans MOSFET N-CH 650V 25A 3-Pin TO-263 T/R (Alt: IPB60R125CP)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 5000
  • 1000:$3.6648
  • 2000:$3.4903
  • 3000:$3.4358
  • 5000:$3.2819
  • 10000:$3.2337
  • 25000:$3.1413
  • 50000:$3.0540
IPB60R125CP
DISTI # SP000297368
Infineon Technologies AGTrans MOSFET N-CH 650V 25A 3-Pin TO-263 T/R (Alt: SP000297368)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€2.9900
  • 2000:€2.8900
  • 4000:€2.7900
  • 6000:€2.5900
  • 10000:€2.3900
IPB60R125CPXT
DISTI # IPB60R125CPATMA1
Infineon Technologies AGTrans MOSFET N-CH 600V 25A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R125CPATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.0900
  • 2000:$2.9900
  • 4000:$2.8900
  • 6000:$2.7900
  • 10000:$2.6900
IPB60R125CPATMA1
DISTI # 33P7133
Infineon Technologies AGMOSFET, N CHANNEL, 650V, 25A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.11ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
  • 1:$5.8300
  • 10:$4.9500
  • 25:$4.7300
  • 50:$4.5100
  • 100:$4.2900
  • 250:$4.0700
  • 500:$3.6600
IPB60R125CPATMA1
DISTI # 726-IPB60R125CPATMA1
Infineon Technologies AGMOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
RoHS: Compliant
0
  • 1:$5.8300
  • 10:$4.9500
  • 100:$4.2900
  • 250:$4.0700
  • 500:$3.6600
  • 1000:$3.0800
IPB60R125CP
DISTI # 726-IPB60R125CP
Infineon Technologies AGMOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
RoHS: Compliant
0
    IPB60R125CP
    DISTI # TMOSP9719
    Infineon Technologies AGCoolMOS 600V25A 125mOhm TO263
    RoHS: Compliant
    Stock DE - 0Stock US - 0
    • 1000:$4.5900
    IPB60R125CPInfineon Technologies AGINSTOCK594
      IPB60R125CPATMA1
      DISTI # 1664016
      Infineon Technologies AGMOSFET, N, TO-263
      RoHS: Compliant
      0
      • 1:£4.9300
      • 10:£3.7900
      • 100:£3.2800
      • 250:£3.1100
      • 500:£2.8000
      IPB60R125CPInfineon Technologies AG600V,25A,N-Channel MOSFET500
      • 1:$4.8300
      • 100:$4.0300
      • 500:$3.5500
      • 1000:$3.4500
      画像 モデル 説明
      STB37N60DM2AG

      Mfr.#: STB37N60DM2AG

      OMO.#: OMO-STB37N60DM2AG

      MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package
      STB28N65M2

      Mfr.#: STB28N65M2

      OMO.#: OMO-STB28N65M2

      MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
      STB28N65M2

      Mfr.#: STB28N65M2

      OMO.#: OMO-STB28N65M2-STMICROELECTRONICS

      MOSFET N-CH 650V 20A D2PAK
      STB37N60DM2AG

      Mfr.#: STB37N60DM2AG

      OMO.#: OMO-STB37N60DM2AG-STMICROELECTRONICS

      MOSFET N-CH 600V 28A
      可用性
      ストック:
      Available
      注文中:
      5500
      数量を入力してください:
      IPB60R125CPの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      皮切りに
      最新の製品
      Top