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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BUZ355 DISTI # BUZ355 | Infineon Technologies AG | - Bulk (Alt: BUZ355) Min Qty: 148 Container: Bulk | Americas - 0 |
|
| BUZ355 | Infineon Technologies AG | Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 RoHS: Not Compliant | 4 |
|
| BUZ355 | Siemens | MOSFET Transistor, N-Channel, TO-218AC | 249 |
|
| BUZ355 | Motorola Semiconductor Products | MOSFET Transistor, N-Channel, TO-218AC | 83 |
|
| BUZ355 | Siemens | MOSFET Transistor, N-Channel, TO-218AC | 1 |
|
| BUZ355 | Siemens | MOSFET Transistor, N-Channel, TO-218AC | 13 |
|
| BUZ355 | Motorola Semiconductor Products | MOSFET Transistor, N-Channel, TO-218AC | 12 |
|
| BUZ353 | STMicroelectronics | 20 | ||
| BUZ350 | Siemens | Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA RoHS: Not Compliant | 42 | |
| BUZ355 | Infineon Technologies AG | Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 RoHS: Not Compliant | 24 | |
| BUZ357 | Siemens | Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA RoHS: Not Compliant | 22 |
| 画像 | モデル | 説明 |
|---|---|---|
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MOSFET 2N-CH 100V 8.5A 56LFPAK |
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IC AUDIO INTERFACE 63VBGA |
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LDO Voltage Regulators High-Speed Load CMOS 3.1V Out 200mA |
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Mfr.#: BU4239FVE-TR OMO.#: OMO-BU4239FVE-TR-ROHM-SEMI |
Supervisory Circuits LOW VOLT DETECT VOLT 4.1V |