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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSM50GD120DN2BOSA1 DISTI # BSM50GD120DN2BOSA1-ND | Infineon Technologies AG | IGBT 2 LOW POWER ECONO2-2 Min Qty: 10 Container: Tray | Limited Supply - Call |
|
| BSM50GD120DN2E3226BOSA1 DISTI # BSM50GD120DN2E3226BOSA1-ND | Infineon Technologies AG | IGBT 2 LOW POWER ECONO2-2 Min Qty: 10 Container: Tray | Limited Supply - Call |
|
| BSM50GD120DN2G DISTI # BSM50GD120DN2G-ND | Infineon Technologies AG | IGBT BSM50GD120DN2GBOSA1 Min Qty: 10 Container: Bulk | Limited Supply - Call | |
| BSM50GD120DN2 DISTI # SP000100359 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 72A 17-Pin EconoPACK 2A (Alt: SP000100359) Min Qty: 1 Container: Package | Europe - 0 |
|
| BSM50GD120DN2BOSA1 DISTI # BSM50GD120DN2BOSA1 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 50A nom 350W FL Bridge - Trays (Alt: BSM50GD120DN2BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| BSM50GD120DN2E3226 DISTI # SP000100366 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 50A 17-Pin ECONOPACK 2 T/R (Alt: SP000100366) Min Qty: 1 Container: Tape and Reel | Europe - 0 |
|
| BSM50GD120DN2E3226BOSA1 DISTI # BSM50GD120DN2E3226BOSA1 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 50A nom 350W FL Bridge T/R - Trays (Alt: BSM50GD120DN2E3226BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| BSM50GD120DN2BOSA1 DISTI # 61M5056 | Infineon Technologies AG | IGBT MODULE, 1200V, ECONOPACK3,Transistor Polarity:N Channel,DC Collector Current:72A,Collector Emitter Saturation Voltage Vce(on):3V,Power Dissipation Pd:350W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:17Pins RoHS Compliant: Yes RoHS: Compliant | 299 |
|
| BSM50GD120DN2 DISTI # 641-BSM50GD120DN2 | Infineon Technologies AG | IGBT Modules 1200V 50A FL BRIDGE RoHS: Compliant | 4 |
|
| BSM50GD120DN2 DISTI # BSM50GD120DN2 | Infineon Technologies AG | IGBT half-bridge x3,Urmax:1.2kV,Ic:50A,ECONOPACK 2K,soldered | 1 |
|
| BSM50GD120DN2 DISTI # IGBT1553 | Infineon Technologies AG | 6-PACK 1200V 72AEconoPACK2 RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
| BSM50GD120DN2BOSA1 DISTI # 1496949 | Infineon Technologies AG | IGBT MODULE, 1200V, ECONOPACK3 RoHS: Compliant | 295 |
|
| BSM50GD120DN2BOSA1 DISTI # 1496949 | Infineon Technologies AG | IGBT MODULE, 1200V, ECONOPACK3 RoHS: Compliant | 345 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: BSM50GP60 OMO.#: OMO-BSM50GP60 |
IGBT Modules 600V 50A PIM |
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Mfr.#: BSM50GP60B2BOSA1 OMO.#: OMO-BSM50GP60B2BOSA1-1190 |
Infineon IGBT Module BSM50GP60_B2 - ECONO2-5-1 |
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Mfr.#: BSM50GB120N2 OMO.#: OMO-BSM50GB120N2-1190 |
Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel |
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Mfr.#: BSM50GD120DCL OMO.#: OMO-BSM50GD120DCL-1190 |
ブランドニューオリジナル |
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Mfr.#: BSM50GD120DLCE3256 OMO.#: OMO-BSM50GD120DLCE3256-1190 |
ブランドニューオリジナル |
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Mfr.#: BSM50GD60DL OMO.#: OMO-BSM50GD60DL-1190 |
ブランドニューオリジナル |
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Mfr.#: BSM50GP120/DN2 OMO.#: OMO-BSM50GP120-DN2-1190 |
ブランドニューオリジナル |
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Mfr.#: BSM50GAL120DN2HOSA1 |
MEDIUM POWER 34MM |
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Mfr.#: BSM50GD120DN2E3226 OMO.#: OMO-BSM50GD120DN2E3226-125 |
IGBT Modules N-CH 1.2KV 50A |
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Mfr.#: BSM50GD120DN2 OMO.#: OMO-BSM50GD120DN2-125 |
IGBT Modules 1200V 50A FL BRIDGE |