IRF8707PBF

IRF8707PBF
Mfr. #:
IRF8707PBF
メーカー:
Infineon / IR
説明:
MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC
ライフサイクル:
メーカー新製品
データシート:
IRF8707PBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8707PBF DatasheetIRF8707PBF Datasheet (P4-P6)IRF8707PBF Datasheet (P7-P9)
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
SO-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
30 V
Id-連続ドレイン電流:
11 A
Rds On-ドレイン-ソース抵抗:
17.5 mOhms
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
6.2 nC
Pd-消費電力:
2.5 W
構成:
独身
包装:
チューブ
高さ:
1.75 mm
長さ:
4.9 mm
トランジスタタイプ:
1 N-Channel
幅:
3.9 mm
ブランド:
インフィニオン/ IR
製品タイプ:
MOSFET
ファクトリーパックの数量:
95
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
SP001560112
単位重量:
0.019048 oz
Tags
IRF870, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon
***ied Electronics & Automation
IRF8707PBF N-channel MOSFET Transistor,11 A, 30 V, 8-Pin SOIC
***p One Stop Global
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC Tube
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***trelec
MOSFET Operating temperature: -55...+150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W
***ical
Trans MOSFET N-CH 30V 11A 8-Pin SOIC Tube
***p One Stop Japan
Trans MOSFET N-CH 30V 11A 8-Pin SOIC
***ment14 APAC
场效应管, N 通道, MOSFET, 30V, 11A, SOIC;
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***i-Key
MOSFET N-CH 30V 11A 8-SOIC
***ronik
N-CH 30V 11A 11,9mOhm SO8 RoHSconf
***ukat
N-Ch 30V 11A 2,5W 0,0119R SO8
***ark
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.9mohm; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Total Gate Charge:6.2nC; No. of Pins:8 ;RoHS Compliant: Yes
***nell
MOSFET, N SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:11A; On State Resistance:0.0119ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:SO-8 (SOIC-8); Termination Type:SMD; Max Voltage Vds:30V; Power Dissipation Pd:2.5W; Pulse Current Idm:88A; Typ Charge Qrr @ Tj = 25°C:6.2nC; Voltage Vds:30V; Transistor Case Style:SO
モデル メーカー 説明 ストック 価格
IRF8707PBF
DISTI # IRF8707PBF-ND
Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRF8707PBF
    DISTI # 58M7423
    Infineon Technologies AGN CHANNEL MOSFET, 30V, 11A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0119ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V RoHS Compliant: Yes129
    • 1:$0.5360
    • 10:$0.4480
    • 100:$0.2730
    • 500:$0.2430
    • 1000:$0.2110
    • 2500:$0.1810
    • 10000:$0.1670
    IRF8707PBF
    DISTI # 942-IRF8707PBF
    Infineon Technologies AGMOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC
    RoHS: Compliant
    0
      IRF8707PBFInternational RectifierPower Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA
      RoHS: Compliant
      5225
      • 1000:$0.2000
      • 500:$0.2100
      • 100:$0.2200
      • 25:$0.2300
      • 1:$0.2400
      IRF8707PBF
      DISTI # 495871
      Infineon Technologies AGMOSFET N-CHANNEL 30V 11A HEXFET SOIC8, PK375
      • 10:£0.4360
      • 50:£0.3700
      • 200:£0.3270
      • 500:£0.2830
      IRF8707TRPBF
      DISTI # IRF8707PBF-GURT
      Infineon Technologies AGN-Ch 30V 11A 2,5W 0,0119R SO8
      RoHS: Compliant
      0
      • 50:€0.2050
      • 100:€0.1650
      • 500:€0.1450
      • 2000:€0.1395
      IRF8707PBF
      DISTI # 1551900
      Infineon Technologies AGMOSFET, N SO-8
      RoHS: Compliant
      0
      • 1:$0.9970
      • 10:$0.8340
      • 100:$0.5090
      • 1000:$0.3930
      • 2500:$0.3580
      画像 モデル 説明
      IRF8707TRPBF

      Mfr.#: IRF8707TRPBF

      OMO.#: OMO-IRF8707TRPBF

      MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC Qg
      IRF8707TRPBF

      Mfr.#: IRF8707TRPBF

      OMO.#: OMO-IRF8707TRPBF-INFINEON-TECHNOLOGIES

      MOSFET N-CH 30V 11A 8-SOIC
      可用性
      ストック:
      Available
      注文中:
      2000
      数量を入力してください:
      IRF8707PBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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