BSZ0909NDXTMA1

Mfr. #:: BSZ0909NDXTMA1
メーカー:: Infineon Technologies
説明:: MOSFET DIFFERENTIATED MOSFETS
ライフサイクル:: メーカー新製品
データシート:: BSZ0909NDXTMA1 データシート
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詳しくは:: BSZ0909NDXTMA1 詳しくは

製品属性
属性値

メーカー：: インフィニオン

製品カテゴリ：: MOSFET

JBoss：: Y

テクノロジー：: Si

商標名：: OptiMOS

包装：: リール

ブランド：: インフィニオンテクノロジーズ

感湿性：: はい

製品タイプ：: MOSFET

ファクトリーパックの数量：: 5000

サブカテゴリ：: MOSFET

パーツ番号エイリアス：: BSZ0909ND SP001637282

単位重量：: 0.000811 oz

Tags: BSZ0909ND, BSZ0909, BSZ090, BSZ09, BSZ0, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ0909NDXTMA1 説明

***ure Electronics: MOSFET 2 N-CH 30V 20A 0.018 OHM PG WISON-8

***ineon SCT: The used OptiMOS™ technology combined with the PQFN 3x3 package offers an optimized solution for DC-DC applications with space critical requirements, PG-WISON-8, RoHS

***ark: Mosfet, Dual N-Ch, 30V, 20A, Wison-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Powerrohs Compliant: Yes |Infineon BSZ0909NDXTMA1

***ineon: The used OptiMOS technology combined with the PQFN 3x3 package offers an optimized solution for DC-DC applications with space critical requirements. The BSZ0909ND fits perfectly in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency. | Summary of Features: Ultra-low Q g; Symmetric half bridge in a small 3.0x3.0mm package outline; Exposed pads; Logic level (4.5V rated); RoHS compliant 6/6 (full lead free) | Benefits: Low switching losses; High switching frequency operation; Lowest parasitics; Low operating temperature; Low gate drive losses; RoHS 6/6 lead free product | Target Applications: Wireless power; Multicopter; Drives

BSZ0909NDXTMA1 詳しくは

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Resonant Wireless Charging - Consumer Applications: Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

Inductive Wireless Charging Solutions: Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.

Market price

モデル	メーカー	説明	ストック	価格
BSZ0909NDXTMA1 DISTI # V72:2272_16665218	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin WISON EP T/R RoHS: Compliant	1318	1000:$0.4967 500:$0.6347 250:$0.6791 100:$0.7546 25:$0.8818 10:$1.0776 1:$1.2531
BSZ0909NDXTMA1 DISTI # V36:1790_16665218	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin WISON EP T/R RoHS: Compliant	0	5000000:$0.4104 2500000:$0.4107 500000:$0.4370 50000:$0.4841 5000:$0.4920
BSZ0909NDXTMA1 DISTI # BSZ0909NDXTMA1CT-ND	Infineon Technologies AG	MOSFET 2 N-CH 30V 20A WISON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4700In Stock	1000:$0.5715 500:$0.7239 100:$0.8763 10:$1.1240 1:$1.2600
BSZ0909NDXTMA1 DISTI # BSZ0909NDXTMA1DKR-ND	Infineon Technologies AG	MOSFET 2 N-CH 30V 20A WISON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4700In Stock	1000:$0.5715 500:$0.7239 100:$0.8763 10:$1.1240 1:$1.2600
BSZ0909NDXTMA1 DISTI # BSZ0909NDXTMA1TR-ND	Infineon Technologies AG	MOSFET 2 N-CH 30V 20A WISON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.4735 5000:$0.4920
BSZ0909NDXTMA1 DISTI # 26196720	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin WISON EP T/R RoHS: Compliant	1318	13:$1.2531
BSZ0909NDXTMA1 DISTI # SP001637282	Infineon Technologies AG	DUAL N-CHANNEL OPTIMOS MOSFET (Alt: SP001637282) RoHS: Compliant Min Qty: 5000	Europe - 5000	50000:€0.4099 30000:€0.4419 20000:€0.4789 10000:€0.5219 5000:€0.6379
BSZ0909NDXTMA1 DISTI # BSZ0909NDXTMA1	Infineon Technologies AG	DUAL N-CHANNEL OPTIMOS MOSFET - Bulk (Alt: BSZ0909NDXTMA1) RoHS: Compliant Min Qty: 782 Container: Bulk	Americas - 0	7820:$0.4059 3910:$0.4129 2346:$0.4279 1564:$0.4439 782:$0.4609
BSZ0909NDXTMA1 DISTI # BSZ0909NDXTMA1	Infineon Technologies AG	DUAL N-CHANNEL OPTIMOS MOSFET - Tape and Reel (Alt: BSZ0909NDXTMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.4469 30000:$0.4549 20000:$0.4709 10000:$0.4889 5000:$0.5069
BSZ0909NDXTMA1 DISTI # 726-BSZ0909NDXTMA1	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	4090	1:$1.1500 10:$0.9870 100:$0.7580 500:$0.6700 1000:$0.5290 5000:$0.4690 10000:$0.4510
BSZ0909NDXTMA1	Infineon Technologies AG	Power Field-Effect Transistor, 4.1A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	10000	1000:$0.4200 500:$0.4400 100:$0.4600 25:$0.4800 1:$0.5200
BSZ0909NDXTMA1 DISTI # 2771840	Infineon Technologies AG	MOSFET, DUAL N-CH, 30V, 20A, WISON-8	4685	500:£0.4850 250:£0.5170 100:£0.5490 10:£0.7150 1:£0.8300
BSZ0909NDXTMA1 DISTI # XSKDRABV0017844	Infineon Technologies AG	RoHS: Compliant	15000 in Stock0 on Order	15000:$0.6053 5000:$0.6486
BSZ0909NDXTMA1 DISTI # 2771840	Infineon Technologies AG	MOSFET, DUAL N-CH, 30V, 20A, WISON-8 RoHS: Compliant	4685	1000:$0.9140 500:$1.1700 100:$1.5000 10:$1.9000 1:$2.1400

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BSZ0909NDXTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes