MSC025SMA120B

MSC025SMA120B
Mfr. #:
MSC025SMA120B
メーカー:
Microchip / Microsemi
説明:
MOSFET UNRLS, FG, SIC MOSFET, TO-247
ライフサイクル:
メーカー新製品
データシート:
MSC025SMA120B データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
MSC025SMA120B 詳しくは
製品属性
属性値
メーカー:
マイクロチップ
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
SiC
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
1.2 kV
Rds On-ドレイン-ソース抵抗:
31 mOhms
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
包装:
チューブ
ブランド:
マイクロチップ/マイクロセミ
製品タイプ:
MOSFET
ファクトリーパックの数量:
1
サブカテゴリ:
MOSFET
Tags
MSC025, MSC02, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
画像 モデル 説明
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160

MOSFET 1200 V 160 mOhm SiC Mosfet
UF3C120040K3S

Mfr.#: UF3C120040K3S

OMO.#: OMO-UF3C120040K3S

MOSFET 35mOhm 1200V 65A SiC Cascode Fast
STPSC15H12D

Mfr.#: STPSC15H12D

OMO.#: OMO-STPSC15H12D

Schottky Diodes & Rectifiers 1200V Power Schottky Silicon Carbide Diode
CRD-5FF0912P

Mfr.#: CRD-5FF0912P

OMO.#: OMO-CRD-5FF0912P

Power Management IC Development Tools Gate Driver Evaluation Board
LSIC1MO120E0160

Mfr.#: LSIC1MO120E0160

OMO.#: OMO-LSIC1MO120E0160-LITTELFUSE

1200V/160mohm SiC MOSFET TO-247-3L
RC0201FR-0724R9L

Mfr.#: RC0201FR-0724R9L

OMO.#: OMO-RC0201FR-0724R9L-YAGEO

Res Thick Film 0201 24.9 Ohm 1% 0.05W(1/20W) ±200ppm/C Epoxy Pad SMD T/R
CRD-5FF0912P

Mfr.#: CRD-5FF0912P

OMO.#: OMO-CRD-5FF0912P-WOLFSPEED

EVAL BOARD FOR C3M0120090J
STPSC15H12D

Mfr.#: STPSC15H12D

OMO.#: OMO-STPSC15H12D-STMICROELECTRONICS

DIODE SCHOTTKY 1.2KV 15A TO220AC
RC0201FR-0715RL

Mfr.#: RC0201FR-0715RL

OMO.#: OMO-RC0201FR-0715RL-YAGEO

Thick Film Resistors - SMD 15 OHM 1%
RC1206FR-072R49L

Mfr.#: RC1206FR-072R49L

OMO.#: OMO-RC1206FR-072R49L-YAGEO

Thick Film Resistors - SMD 1/4W 2.49 Ohms 1%
可用性
ストック:
Available
注文中:
4000
数量を入力してください:
MSC025SMA120Bの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$59.55
$59.55
2
$58.47
$116.94
5
$57.02
$285.10
10
$56.07
$560.70
25
$55.38
$1 384.50
50
$52.07
$2 603.50
100
$49.68
$4 968.00
250
$44.22
$11 055.00
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