IPA65R190C7

Mfr. #:: IPA65R190C7
メーカー:: Rochester Electronics, LLC
説明:: Power Field-Effect Transistor, 8A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ライフサイクル:: メーカー新製品
データシート:: IPA65R190C7 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: XPA65R190

包装: チューブ

パーツエイリアス: IPA65R190C7XKSA1 SP001080140

単位重量: 0.090478 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-220-FP-3

テクノロジー: Si

構成: 独身

Pd-電力損失: 30 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 9 ns

立ち上がり時間: 11 ns

Vgs-Gate-Source-Voltage: +/- 20 V

Id-連続-ドレイン-電流: 49 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 700 V

Vgs-th-Gate-Source-Threshold-Voltage: 3.5 V

Rds-On-Drain-Source-Resistance: 190 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 110 ns

典型的なターンオン遅延時間: 15 ns

Qg-Gate-Charge: 23 nC

フォワード-相互コンダクタンス-最小: -

チャネルモード: 強化

Tags: IPA65R190C, IPA65R19, IPA65R1, IPA65R, IPA65, IPA6, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

モデル	メーカー	説明	ストック	価格
IPA65R190C7XKSA1 DISTI # V99:2348_06377124	Infineon Technologies AG	Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	463	5000:$1.2120 2500:$1.2429 1000:$1.3350 500:$1.5819 100:$1.7790 10:$2.1490 1:$2.4680
IPA65R190C7XKSA1 DISTI # IPA65R190C7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 8A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	100In Stock	1000:$1.5688 500:$1.8934 100:$2.4344 10:$3.0290 1:$3.3500
IPA65R190C7XKSA1 DISTI # 26197182	Infineon Technologies AG	Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	463	100:$1.7760 10:$2.1450 5:$2.4630
IPA65R190C7XKSA1 DISTI # IPA65R190C7XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 8A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPA65R190C7XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$1.3900 1000:$1.2900 2000:$1.2900 3000:$1.1900 5000:$1.1900
IPA65R190C7XKSA1 DISTI # IPA65R190C7	Infineon Technologies AG	Trans MOSFET N-CH 700V 8A 3-Pin TO-220 Tube (Alt: IPA65R190C7) RoHS: Compliant Min Qty: 500 Container: Tube	Asia - 0	500:$1.4051 1000:$1.3661 1500:$1.3292 2500:$1.2942 5000:$1.2774 12500:$1.2610 25000:$1.2451
IPA65R190C7	Infineon Technologies AG	Power Field-Effect Transistor, 8A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	725	1000:$1.2600 500:$1.3300 100:$1.3800 25:$1.4400 1:$1.5600
IPA65R190C7XKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 8A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	34000	1000:$1.3000 500:$1.3700 100:$1.4300 25:$1.4900 1:$1.6000
IPA65R190C7 DISTI # 726-IPA65R190C7	Infineon Technologies AG	MOSFET HIGH POWER BEST IN CLASS RoHS: Compliant	238	1:$2.9000 10:$2.4600 100:$1.9700 500:$1.7300
IPA65R190C7XKSA1 DISTI # 726-IPA65R190C7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER BEST IN CLASS	0	1:$2.9000 10:$2.4600 100:$1.9700 500:$1.7300
IPA65R190C7XKSA1 DISTI # 2420509	Infineon Technologies AG	MOSFET, N-CH, 650V, 8A, TO-220FP-3 RoHS: Compliant	0	1:$4.5900 10:$3.9000 100:$3.1200 500:$2.7500
IPA65R190C7XKSA1 DISTI # 2420509	Infineon Technologies AG	MOSFET, N-CH, 650V, 8A, TO-220FP-3 RoHS: Compliant	0	1:£2.4800 10:£1.8600 100:£1.4900 250:£1.4000 500:£1.3100
IPA65R190C7XKSA1 DISTI # C1S322000651946	Infineon Technologies AG	Trans MOSFET N-CH 650V 8A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	463	100:$1.7760 10:$2.1450 1:$2.4630

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