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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BF888H6327XTSA1 DISTI # BF888H6327XTSA1-ND | Infineon Technologies | MOSFET N-CH RF 12V 30MA SOT-343 Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BF888H6327XTSA1 DISTI # 31603877 | Infineon Technologies | Trans RF BJT NPN 4V 0.03A 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant | 1014000 |
|
| BF888H6327XTSA1 DISTI # 33959048 | Infineon Technologies | Trans RF BJT NPN 4V 0.03A 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant | 12000 |
|
| BF888H6327XTSA1 DISTI # BF888H6327XTSA1 | Infineon | Trans GP BJT NPN 4V 0.03A 4-Pin(3+Tab) SOT-343 T/R - Tape and Reel (Alt: BF888H6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| BF888H6327XTSA1 DISTI # 726-BF888H6327XTSA1 | Infineon | RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant | 2950 |
|
| BF888H6327 | Infineon Technologies | RF Small Signal Bipolar Transistor, NPN RoHS: Not Compliant | 3000 |
|
| BF888H6327XTSA1 DISTI # 8578435 | Infineon | On a Reel of 3000, Infineon BF888H6327XTSA1 NPN Transistor, 30 mA, 4 V, 4-Pin SOT-343, RL Min Qty: 3000 Container: Reel | 0 |
|
| BF888H6327XTSA1 DISTI # BF888H6327XTSA1 | INFINEON TECHNOLOGIES | Transistor: NPN,bipolar,RF,4V,30mA,160mW,SOT343 | 3000 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: BF820W,135 OMO.#: OMO-BF820W-135 |
Bipolar Transistors - BJT TRANS HV TAPE-11 |
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Mfr.#: BF821/DG/B2 , SPP08N80C3 |
ブランドニューオリジナル |
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Mfr.#: BF851A OMO.#: OMO-BF851A-VISHAY |
ブランドニューオリジナル |
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Mfr.#: BF861C |
ブランドニューオリジナル |
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Mfr.#: BF869 OMO.#: OMO-BF869-1190 |
0.05 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-202 |
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Mfr.#: BF872P OMO.#: OMO-BF872P-1190 |
ブランドニューオリジナル |
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Mfr.#: BF885S OMO.#: OMO-BF885S-1190 |
ブランドニューオリジナル |
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Mfr.#: BF888H6327 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, C Band, Silicon, NPN |
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Mfr.#: BF820W/DG,115 OMO.#: OMO-BF820W-DG-115-1190 |
Other semiconductors |
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Mfr.#: BF862 OMO.#: OMO-BF862-1190 |
INSTOCK |
