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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| RF1S70N06SM9A DISTI # 512-RF1S70N06SM9A | ON Semiconductor | MOSFET TO-263 RoHS: Not compliant | 0 | |
| RF1S70N06SM DISTI # 512-RF1S70N06SM | ON Semiconductor | MOSFET TO-263 RoHS: Not compliant | 0 | |
| RF1S70N06SM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 3200 |
|
| RF1S70N06SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1600 |
|
| RF1S70N06 | Harris Semiconductor | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 256 |
|
| RF1S70N06SM | Harris Semiconductor | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 6785 |
|
| RF1S70N06SM9A | Fairchild Semiconductor Corporation | 73 | ||
| RF1S70N06SM9A | Harris Semiconductor | 640 |
| |
| RF1S70N06SM | f | RoHS: Not Compliant | 350 | |
| RF1S70N06DPAK | HARTING Technology Group | RoHS: Not Compliant | 2000 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: RF1S 3R3J OMO.#: OMO-RF1S-3R3J-1190 |
ブランドニューオリジナル |
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Mfr.#: RF1S23N06LESM OMO.#: OMO-RF1S23N06LESM-1190 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S25N06SMR4643 OMO.#: OMO-RF1S25N06SMR4643-1190 |
ブランドニューオリジナル |
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Mfr.#: RF1S30N06LESM OMO.#: OMO-RF1S30N06LESM-1190 |
ブランドニューオリジナル |
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Mfr.#: RF1S42N03LSM OMO.#: OMO-RF1S42N03LSM-1190 |
42 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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Mfr.#: RF1S45N03LSNM9A OMO.#: OMO-RF1S45N03LSNM9A-1190 |
ブランドニューオリジナル |
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Mfr.#: RF1S50N06 OMO.#: OMO-RF1S50N06-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S60P03SM OMO.#: OMO-RF1S60P03SM-1190 |
MOSFET Transistor, P-Channel, TO-263AB |
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Mfr.#: RF1S630 OMO.#: OMO-RF1S630-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S70N03SM OMO.#: OMO-RF1S70N03SM-1190 |
ブランドニューオリジナル |
