SI4410BDY-T1-E3

Mfr. #:: SI4410BDY-T1-E3
メーカー:: Vishay
説明:: MOSFET N-CH 30V 7.5A 8-SOIC
ライフサイクル:: メーカー新製品
データシート:: SI4410BDY-T1-E3 データシート
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ECAD Model:

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI4410BDY-T1

単位重量: 0.006596 oz

取り付けスタイル: SMD / SMT

商標名: TrenchFET

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 8-SO

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 1.4W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: -

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 7.5A (Ta)

Rds-On-Max-Id-Vgs: 13.5 mOhm @ 10A, 10V

Vgs-th-Max-Id: 3V @ 250μA

ゲートチャージ-Qg-Vgs: 20nC @ 5V

Pd-電力損失: 1.4 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 10 ns

立ち上がり時間: 10 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 7.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 13.5 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 40 ns

典型的なターンオン遅延時間: 10 ns

チャネルモード: 強化

Tags: SI4410BDY-T1-E, SI4410BDY-T, SI4410BDY, SI4410BD, SI4410B, SI4410, SI441, SI44, SI4

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

モデル	メーカー	説明	ストック	価格
SI4410BDY-T1-E3 DISTI # V72:2272_09216472	Vishay Intertechnologies	Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R RoHS: Compliant	216	75000:$0.3680 30000:$0.3950 15000:$0.4219 6000:$0.4489 3000:$0.4758 1000:$0.5028 500:$0.5298 250:$0.5567 100:$0.5837 50:$0.6106 25:$0.6375 10:$0.6645 1:$0.6915
SI4410BDY-T1-E3 DISTI # SI4410BDY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 7.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI4410BDY-T1-E3 DISTI # SI4410BDY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 7.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI4410BDY-T1-E3 DISTI # SI4410BDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 7.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI4410BDY-T1-E3 DISTI # 30270913	Vishay Intertechnologies	Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R RoHS: Compliant	216	250:$0.5567 100:$0.5837 50:$0.6106 25:$0.6375 16:$0.6645
SI4410BDY-T1-E3 DISTI # 30616217	Vishay Intertechnologies	Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R RoHS: Compliant	163	100:$0.5967 50:$0.7306 14:$0.7778
SI4410BDY-T1-E3 DISTI # 06J7687	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:30V,On Resistance Rds(on):20mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes	0
SI4410BDY-T1-E3 DISTI # 35K3458	Vishay Intertechnologies	N CHANNEL MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:30V,On Resistance Rds(on):20mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:8Pins , RoHS Compliant: Yes	0
SI4410BDY-T1-E3. DISTI # 30AC0158	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0
SI4410BDY-T1-E3 DISTI # 70026214	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant	0	2500:$0.5000 5000:$0.4800 12500:$0.4700 25000:$0.4500 62500:$0.4300
SI4410BDY-T1-E3	Vishay Intertechnologies	Single N-Channel 30 V 0.0135 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant	382Cut Tape/Mini-Reel	1:$0.7600 250:$0.6050 500:$0.5900 750:$0.5800 1500:$0.5500
SI4410BDY-T1-E3 DISTI # 781-SI4410BDY-E3	Vishay Intertechnologies	MOSFET 30V 10A 2.5W RoHS: Compliant	0
SI4410BDY-T1-E3	Vishay Intertechnologies		5000
SI4410BDY-T1-E3	SILI		10000
SI4410BDY-T1-E3	Vishay Intertechnologies		2352
SI4410BDY-T1-E3	Vishay Siliconix	7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	5117	3557:$0.1980 795:$0.2250 1:$0.7200
SI4410BDY-T1-E3	Vishay Siliconix	7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	1447	795:$0.2250 168:$0.2520 1:$0.7200
SI4410BDY-T1-E3	Vishay Intertechnologies	7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	1873	953:$0.1820 172:$0.2100 1:$0.7000
SI4410BDYT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 505
SI4410BDY-T1-E3		INSTOCK	1480
SI4410BDY-T1-E3 DISTI # 1885179	Vishay Intertechnologies	N CHANNEL MOSFET, FULL REEL RoHS: Compliant	0	2500:$0.5890
SI4410BDY-T1-E3 DISTI # 1794995	Vishay Intertechnologies	N CH MOSFET RoHS: Compliant	0	1:$1.4400 10:$1.1500 100:$0.8690 500:$0.7190 1000:$0.5890
SI4410BDY-T1-E3 DISTI # 1794995	Vishay Intertechnologies	N CH MOSFET RoHS: Compliant	0	2500:£0.4020
SI4410BDY-T1-E3	Vishay Intertechnologies	MOSFET 30V 10A 2.5W	Americas - 97500
SI4410BDY-T1-E3 DISTI # XSFP00000007289	Vishay Siliconix	RoHS: Compliant	5835	2500:$1.5200 5835:$1.3800
SI4410BDY-T1-E3 DISTI # C1S806001122943	Vishay Intertechnologies	MOSFETs	163	100:$0.4680 50:$0.5730 10:$0.6100 1:$1.5200
SI4410BDY-T1-E3 DISTI # C1S803600844876	Vishay Intertechnologies	MOSFETs RoHS: Compliant	276	100:$0.3903 50:$0.3931 25:$0.4368 10:$0.5660

画像	モデル	説明
	Mfr.#: SI4410BDY-T1-GE3 OMO.#: OMO-SI4410BDY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3
	Mfr.#: SI4410BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4410BDY-T1-E3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SI4410B OMO.#: OMO-SI4410B-1190	ブランドニューオリジナル
	Mfr.#: SI4410BD OMO.#: OMO-SI4410BD-1190	ブランドニューオリジナル
	Mfr.#: SI4410BDY OMO.#: OMO-SI4410BDY-1190	Transistor: N-MOSFET, unipolar, 30V, 8A, 2.5W, SO8
	Mfr.#: SI4410BDY-71-E3 OMO.#: OMO-SI4410BDY-71-E3-1190	ブランドニューオリジナル
	Mfr.#: SI4410BDY-T1 OMO.#: OMO-SI4410BDY-T1-1190	INSTOCK
	Mfr.#: SI4410BDY-T1-E3 GE3 OMO.#: OMO-SI4410BDY-T1-E3-GE3-1190	ブランドニューオリジナル
	Mfr.#: SI4410BDY-T1-GE3 OMO.#: OMO-SI4410BDY-T1-GE3-VISHAY	MOSFET N-CH 30V 7.5A 8-SOIC
	Mfr.#: SI4410BDY-Y1-GE3 OMO.#: OMO-SI4410BDY-Y1-GE3-1190	ブランドニューオリジナル

SI4410BDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes