IGZ100N65H5XKSA1

IGZ100N65H5XKSA1
Mfr. #:
IGZ100N65H5XKSA1
メーカー:
Infineon Technologies
説明:
IGBT Transistors IGBT PRODUCTS
ライフサイクル:
メーカー新製品
データシート:
IGZ100N65H5XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IGZ100N65H5XKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
IGBTトランジスタ
テクノロジー:
Si
パッケージ/ケース:
TO-247-4
取り付けスタイル:
スルーホール
構成:
独身
コレクター-エミッター電圧VCEOMax:
650 V
コレクター-エミッター飽和電圧:
1.65 V
最大ゲートエミッタ電圧:
20 V
25℃での連続コレクタ電流:
161 A
Pd-消費電力:
536 W
最低動作温度:
- 40 C
最高作動温度:
+ 175 C
シリーズ:
TRENCHSTOP 5 H5
包装:
チューブ
ブランド:
インフィニオンテクノロジーズ
ゲートエミッタリーク電流:
100 nA
製品タイプ:
IGBTトランジスタ
ファクトリーパックの数量:
240
サブカテゴリ:
IGBT
商標名:
トレンチストップ
パーツ番号エイリアス:
IGZ100N65H5 SP001160058
単位重量:
0.217475 oz
Tags
IGZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 161A, To-247; Dc Collector Current:161A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:536W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes
***ineon
To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
モデル メーカー 説明 ストック 価格
IGZ100N65H5XKSA1
DISTI # V99:2348_06377191
Infineon Technologies AGTrans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube0
    IGZ100N65H5XKSA1
    DISTI # V36:1790_06377191
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube0
    • 240000:$3.4040
    • 120000:$3.4060
    • 24000:$3.6280
    • 2400:$4.0160
    • 240:$4.0800
    IGZ100N65H5XKSA1
    DISTI # IGZ100N65H5XKSA1-ND
    Infineon Technologies AGIGBT 650V 100A SGL TO-247-4
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    205In Stock
    • 720:$4.7557
    • 240:$5.4614
    • 25:$6.2900
    • 10:$6.5970
    • 1:$7.3000
    IGZ100N65H5XKSA1
    DISTI # IGZ100N65H5XKSA1
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube - Rail/Tube (Alt: IGZ100N65H5XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Americas - 0
    • 1440:$3.6900
    • 2400:$3.6900
    • 960:$3.8900
    • 480:$3.9900
    • 240:$4.1900
    IGZ100N65H5XKSA1
    DISTI # IGZ100N65H5XKSA1
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube - Bulk (Alt: IGZ100N65H5XKSA1)
    RoHS: Compliant
    Min Qty: 100
    Container: Bulk
    Americas - 0
    • 500:$3.1900
    • 1000:$3.1900
    • 300:$3.2900
    • 200:$3.4900
    • 100:$3.5900
    IGZ100N65H5XKSA1
    DISTI # SP001160058
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube (Alt: SP001160058)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€2.9900
    • 500:€3.1900
    • 100:€3.2900
    • 50:€3.4900
    • 25:€3.5900
    • 10:€3.7900
    • 1:€4.0900
    IGZ100N65H5XKSA1
    DISTI # 49AC0267
    Infineon Technologies AGIGBT, SINGLE, 650V, 161A, TO-247,DC Collector Current:161A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:536W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes499
    • 500:$4.5700
    • 250:$5.0100
    • 100:$5.2500
    • 50:$5.6500
    • 25:$6.0500
    • 10:$6.3400
    • 1:$7.0200
    IGZ100N65H5XKSA1
    DISTI # 726-IGZ100N65H5XKSA1
    Infineon Technologies AGIGBT Transistors IGBT PRODUCTS236
    • 1:$6.9500
    • 10:$6.2800
    • 25:$5.9900
    • 100:$5.2000
    • 250:$4.9600
    • 500:$4.5200
    IGZ100N65H5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 161A I(C), 650V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant
    3790
    • 1000:$3.3200
    • 500:$3.4900
    • 100:$3.6300
    • 25:$3.7900
    • 1:$4.0800
    IGZ100N65H5XKSA1
    DISTI # IGZ100N65H5XKSA1
    Infineon Technologies AGTransistor: IGBT,650V,101A,268W,TO247-4,Series: H599
    • 120:$3.5500
    • 30:$3.9500
    • 5:$4.9200
    • 1:$5.7100
    IGZ100N65H5XKSA1
    DISTI # IGZ100N65H5
    Infineon Technologies AG650V 161A 536W TO247-4
    RoHS: Compliant
    240
    • 1:€7.0300
    • 10:€4.0300
    • 50:€3.0300
    • 100:€2.9100
    IGZ100N65H5XKSA1
    DISTI # 2839422
    Infineon Technologies AGIGBT, SINGLE, 650V, 161A, TO-247624
    • 500:£3.5100
    • 250:£3.8600
    • 100:£4.0500
    • 10:£4.6700
    • 1:£5.9300
    IGZ100N65H5XKSA1
    DISTI # 2839422
    Infineon Technologies AGIGBT, SINGLE, 650V, 161A, TO-247
    RoHS: Compliant
    499
    • 1000:$6.1700
    • 500:$6.4800
    • 250:$6.8400
    • 100:$7.2400
    • 10:$8.1700
    • 1:$8.7500
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    可用性
    ストック:
    228
    注文中:
    2211
    数量を入力してください:
    IGZ100N65H5XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $6.95
    $6.95
    10
    $6.28
    $62.80
    25
    $5.99
    $149.75
    100
    $5.20
    $520.00
    250
    $4.96
    $1 240.00
    500
    $4.52
    $2 260.00
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