2N6431 vs 2N6430 vs 2N643

 
PartNumber2N64312N64302N643
DescriptionBipolar Transistors - BJT NPN High VoltageBipolar Transistors - BJT . .RF POWER TRANSISTOR
ManufacturerCentral SemiconductorCentral SemiconductorCentral Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSYY-
Mounting StyleThrough Hole--
Package / CaseTO-18TO-18-
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max300 V--
Collector Base Voltage VCBO300 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N64312N64302N6430
Height5.33 mm--
Length5.84 mm--
PackagingBulkBulkTray
Width5.84 mm--
BrandCentral SemiconductorCentral Semiconductor-
Continuous Collector Current0.45 A--
DC Collector/Base Gain hfe Min25--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20002000-
SubcategoryTransistorsTransistors-
Part # Aliases2N6431 PBFREE2N6430 PBFREE-
Unit Weight0.011020 oz--
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