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| PartNumber | APT80GP60J | APT80GP60B2G | APT80GP60B2 |
| Description | IGBT Modules FG, IGBT, 600V, 80A, SOT-227 | IGBT Modules FG, IGBT, 600V, 80A, TO-247 T-MAX, RoHS | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 2.2 V | 2.2 V | - |
| Continuous Collector Current at 25 C | 151 A | 100 A | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Pd Power Dissipation | 462 W | 1.041 kW | - |
| Package / Case | ISOTOP-4 | T-Max-3 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |