ATP301-TL-H vs ATP301 vs ATP302

 
PartNumberATP301-TL-HATP301ATP302
DescriptionMOSFET POWER MOSFET
ManufacturerON SemiconductorONON
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseATPAK-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current28 A--
Rds On Drain Source Resistance75 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge73 nC--
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation70 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingReelReelReel
SeriesATP301ATP301ATP302
Transistor Type1 P-Channel1 P-Channel1 P-Channel
BrandON Semiconductor--
Fall Time190 ns--
Product TypeMOSFET--
Rise Time130 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time330 ns--
Typical Turn On Delay Time32 ns--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case-TO-252-3TO-252-3
Pd Power Dissipation-70 W70 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-28 A70 A
Vds Drain Source Breakdown Voltage-- 100 V- 60 V
Rds On Drain Source Resistance-57 mOhms13 mOhms
Minimum Operating Temperature--- 55 C
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