DMN2005DLP4K-7 vs DMN2005DLP4K vs DMN2005K

 
PartNumberDMN2005DLP4K-7DMN2005DLP4KDMN2005K
DescriptionMOSFET N-Channel
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseX2-DFN1310-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance1.5 Ohms--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation350 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.35 mm--
Length1.3 mm--
ProductMOSFET Small Signal--
SeriesDMN2005--
Transistor Type2 N-Channel--
Width1 mm--
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
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