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| PartNumber | IRF640NS | IRF640NSTR + | IRF640NSPBF |
| Description | MOSFET N-CHANNEL 200V 18A D2PAK, EA | Darlington Transistors MOSFET 200V 24A 0.15 Ohm 25nC Qg 18A ID | |
| Manufacturer | IR | - | IR |
| Product Category | FETs - Single | - | FETs - Single |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 150 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 5.5 ns |
| Rise Time | - | - | 19 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 18 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Rds On Drain Source Resistance | - | - | 150 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 23 ns |
| Typical Turn On Delay Time | - | - | 10 ns |
| Qg Gate Charge | - | - | 44.7 nC |
| Channel Mode | - | - | Enhancement |